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Deposition of large organic molecules under UHV
Krajňák, Tomáš ; Novák,, Jiří (referee) ; Čechal, Jan (advisor)
In this thesis, large organic molecules (DM15N, DM18N, Cu(dbm)2) were deposited. These molecules are cannot be deposited by thermal sublimation due the fact that they decompose at lower temperature than they sublime. The employed molecules to single molecular magnets, which can be potentially used as quantum bites (qubit). The new method of deposition atomic layer injection made by Bihur Crystal company was introduced and tested. The method uses liquid solution with molecules which is driven by argon gas through pulse valve to the sample placed in ultra-high vacuum chamber. During the deposition, droplets of solution are formed on the sample surface. The solvent can be removed by light annealing or by keeping the sample in the vacuum for couple of days. The molecules were investigated by x-ray photoelectron spectroscopy and by scanning electron microscopy to determine fragmentation of the molecules, to study topography of the resultant surface and homogeneity of the deposited layer. We found conditions at which the intact molecules are deposited on the sample surfaces and form molecular nano- and micro- crystals.
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Diagnostics of plasma chemical deposition processes using organometallic precursors
Sahánková, Hana ; Dvořák, Pavel (referee) ; Krčma, František (advisor)
The aim of this work is diagnostic of plasma chemical deposition thin films based on organometallic precursors. Thin layers have recently become one of the most used methods for surface treatment of materials. They are used as a protective, functional layer, they improve surface properties of materials or increase or reduce the adhesion to various compounds. Plasma polymers are a modern trend in surface treatment technology. Their structure is different from classical polymers. The titanium (IV)isopropoxide was chosen as a monomer example, which is frequently used as a monomer for photocatalytic TiO2 films plasma deposition. These thin films are very promising for the removal of various air and water pollutants and thus they can significantly help in the increase of the environmental quality. Measurements took place on a commercial device Plasmatreater AS 400. The theoretical part describes the background needed for the study and diagnostics of plasma processes and technologies. The optical emission spectroscopy was chosen as a diagnostic method, and thus its principles are outlined in the theoretical part. Infrared spectroscopy and X-ray photoelectron spectroscopy were applied for the diagnostics of prepared thin films and they are also described in the theoretical part. The experimental part contains two sections. The first section is dedicated to the plasma diagnostics by optical emission spectroscopy. Discharge was generated in nitrogen or in the air. Measurements were performed at seven different duty cycles and at two different flow rates for each of the working gases. The molecular bands of nitrogen first negative and second systems, CN violet bands, and atomic lines of oxygen and nozzle elements (Cu, Cr) were identified in the spectra. The titanium lines, and bands of TiO were determined if the precursor was added. Electron temperature was calculated using chromium lines, and electron temperature maps were obtained for continuous mode and pulse mode with duty cycle 70% for nitrogen plasma with 500 sccm precursor flow. Similar discharge maps were also processed using the selected line of titanium (520 nm) TiO band (625 nm) again for the same discharge conditions. Furthermore, the dependences of the same quantities were obtained along the discharge axis as a function of duty cycle in both gases with precursor flow of 1000 sccm. The second part of results brings material analyzes of the deposited samples. The peaks of anatase and rutile have been identified by infrared spectroscopy. Using X-ray photoelectron spectroscopy, we found that our layers contain a significant amount of non-dissociated precursor. Moreover, a large number of radicals, which can interact with atmospheric gases, was determined on the surface. These radicals are removable by annealing or by ion etching. All results obtained during this research can significantly help us to improve the quality of deposited layers and allow us also some prediction of the thin film properties at given plasma conditions. Of course, further experimental as well as theoretical studies should be completed to obtain complete knowledge needed for the wide applications of these layers.
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Passivation of germanium surface using ALD
Kuba, Jakub ; Polčák, Josef (referee) ; Kolíbal, Miroslav (advisor)
The thesis deals with passivation of germanium surfaces by chemical etching and atomic layer deposition (ALD). Attention was paid to the rate of oxidation of germanium surfaces after selected passivation methods and the composition of the germanium suboxides. In the thesis selected methods for germanium oxide removal are reviewed and a brief description of the methods used for analysis (XPS) and thin film deposition (ALD) is given.
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Properties of metal-organic networks on modified weakly-interacting substrates
Černá, Lenka ; Švec, Martin (referee) ; Jakub, Zdeněk (advisor)
Tato práce se zaměřuje na syntézu a charakterizaci dvourozměrných (2D) metal-organických sítí na tradičních kovových substrátech i na modifikovaných slabě interagujících substrátech, konkrétně na interkalovaném grafenu. Jedinečné vlastnosti 2D materiálů, jako je mechanická pružnost, velký měrný povrch a přístupná aktivní místa, je činí atraktivními pro různé aplikace, včetně flexibilní elektroniky, katalýzy, senzorů a separace plynů. Ačkoli metal-organické sítě mají potenciální využití v různých oblastech, většina z nich jsou elektrické izolátory s nízkou pohyblivostí náboje, což omezuje jejich použití v elektronických zařízeních. První část této práce se zabývá syntézou slibného vodivého metalo-organického systému na Au(111) a systém je zkoumán pomocí nízkoteplotní skenovací tunelovací mikroskopie (STM) a skenovací tunelovací spektroskopie (STS). Druhá část práce zkoumá syntézu metal-organických sítí na modifikovaném grafenovém substrátu pomocí STM, nízkoenergiové elektronové mikroskopie (LEEM), rentgenové fotoelektronové spektroskopie (XPS) a úhlově rozlišené fotoemisní spektroskopie (ARPES). Výsledky naznačují, že modifikace substrátu metal-organické sítě interkalací může umožnit vyladění přenosu náboje mezi metal-organickou sítí a substrátem a zároveň zachování strukturní integrity rozhraní. Celkově tato práce přispívá k pochopení syntézy a charakterizace 2D metal-organických sítí jak na tradičních kovových substrátech, tak na modifikovaných grafenových substrátech.
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Study of gas molecule - surface interaction
Kettner, Miroslav ; Nehasil, Václav (advisor) ; Johánek, Viktor (referee)
Title: Study of gas molecule - surface interaction Author: Miroslav Kettner Department: Department of surface and plasma science Supervisor: doc. RNDr. Václav Nehasil, Dr., Department of surface and plasma science Abstract: In this work, we examined the suitability of rhodium deposited on a plasma sprayed substrate of titanium dioxide for catalysis reactions. With X-ray photoelectron spectroscopy method, the thermal stability of TiO2 prepared with plasma spray technology on aluminum plate was tested at first. Then, rhodium was evaporated on substrate and thermal stability of the whole system Rh/TiO2 was determined. Further methods of thermal desorption spectroscopy and molecular beam were used to study adsorption and desorption of CO and reaction of CO with oxygen. It was verified that the system Rh/TiO2 ceases to adsorbing CO after heating above 620 K, also the CO reaction with oxygen exhibits considerably lower intensity after heating above 620 K. After calibrating on rhodium plate, it was determined that the intensity of CO2 creation on Rh/TiO2 is four times lower than intensity on the rhodium plate. Unprompted adsorption and desorption passivation of the system, however, seems to be the most significant problem. Therefore, the system was assessed as unsuitable for further research. Keywords: Rh, TiO2,...
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Properties of point defects in CdTe at temperatures of 300 - 600 K
Korcsmáros, Gabriel ; Moravec, Pavel (advisor) ; Šikula, Josef (referee) ; Toušková, Jana (referee)
The thermal stability of p-type CdTe crystals by using conductivity and Hall-effect measurements have been studied at room and slightly increased temperatures. It was observed that thermal changes often implicate an anomalous behavior of the hole density characterized by reversible decrease/increase in a heating/cooling regime. This anomaly was explained by a transfer of fast diffusing donors between Te inclusions and the bulk of the sample. Sodium and potassium were determined by the Secondary Ion Mass Spectroscopy (SIMS) as the most probable diffusing species. To verify this behavior samples were also treated in saturated NaCl solution for different time intervals in order to examine the influence of the oxide layer and sodium on the surface of the sample. To determine the structure of the surface the sample was characterized by ellipsometric and X-ray photoelectron spectroscopy (XPS) and SIMS. Very low determined diffusion coefficient of Na was explained by trapping of Na in Cd sublattice
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Structural Charachterization Of Aln Thin Films Obtained On Silicon Surface By Pe-Ald
Dallaev, Rashid
The aim of this study is to investigate the hydrogen impregnations in AlN thin films deposited using plasma-enhanced atomic layer deposition technique. As of date, there is an apparent gap in the literature regarding the matter of hydrogen impregnation within the AlN layers. Hydrogen is a frequent contaminant and its content has detrimental effect on the quality of resulted layer, which is why it is relevant to investigate this particular contaminant and try to eliminate or at least minimize its quantity. Within the films hydrogen commonly forms amino or imide types of bonds (–NH2, - NH). There is only a handful of analytical methods enabling the detection of hydrogen. This particular study comprises two of them – Fourier-transform infrared spectroscopy (FTIR) and second ion-mass spectrometry (SIMS). XPS analysis has also been included to examine the surface nature and structural imperfections of the grown layer.
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Characterization Of Aln Thin Films Deposited On Thermally Processed Silicon Substrates Using Pe-Ald
Dallaev, Rashid
The aim of this work is to study topography and chemical composition of AlN thin films deposited on Si substrates previously exposed to various time of thermal processing using plasma-enhanced atomic layer deposition technique. The samples were heated up to 500 °C for the period of 2 and 4 hours. Chemical composition of wafers and the films obtained are provided by Xray photoelectron spectroscopy (XPS). Surface topography was investigated using atomic force microscopy (AFM).
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Properties of point defects in CdTe at temperatures of 300 - 600 K
Korcsmáros, Gabriel ; Moravec, Pavel (advisor) ; Šikula, Josef (referee) ; Toušková, Jana (referee)
The thermal stability of p-type CdTe crystals by using conductivity and Hall-effect measurements have been studied at room and slightly increased temperatures. It was observed that thermal changes often implicate an anomalous behavior of the hole density characterized by reversible decrease/increase in a heating/cooling regime. This anomaly was explained by a transfer of fast diffusing donors between Te inclusions and the bulk of the sample. Sodium and potassium were determined by the Secondary Ion Mass Spectroscopy (SIMS) as the most probable diffusing species. To verify this behavior samples were also treated in saturated NaCl solution for different time intervals in order to examine the influence of the oxide layer and sodium on the surface of the sample. To determine the structure of the surface the sample was characterized by ellipsometric and X-ray photoelectron spectroscopy (XPS) and SIMS. Very low determined diffusion coefficient of Na was explained by trapping of Na in Cd sublattice
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